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?2007 fairchild semiconductor corporation december 2007 FPAB30BH60 smart power module (spm ? ) FPAB30BH60 smart power module(spm ? ) for front-end rectifier general description FPAB30BH60 is an advanced smart power module(spm ? ) of pfc(power factor correction) that fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. it combines optimized circuit protection and drive ic matched to high frequency switching igbts. system reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function. features ? low thermal resistance due to al 2 o 3 -dbc substrate ? 600v-30a 1-phase igbt pwm semi-converter including a drive ic for gate driving and protection ? typical switching frequency of 20khz ? isolation rating of 2500vrms/min. applications ? ac 85v ~ 264v single-phase front-end rectifier fig. 1.
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) integrated power functions ? pfc converter for single-phase ac/dc power conversion (please refer to fig. 3) integrated drive, protecti on and system control functions ? for igbts: gate drive circuit, overcurrent circuit protection (oc), control supply circuit under-voltage (uv) protection ? fault signaling: corresponding to a uv fault ? input interface: 5v cmos/lsttl compatible, schmitt trigger input pin configuration fig. 2. top view v cc com in v fo p p n.c. s n n nr l pr r c fod c sc r th v th n.c. n n v com in v fo c fod c sc com com nr nr nr n.c.
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) pin descriptions * 11th and 12th pins are cut. please refer to package outline drawings for more detail. internal equivalent circ uit and input/output pins fig. 3. package marking & ordering information pin number pin name pin description 1 v cc common bias voltage for ic and igbts driving 2,3,4 com common supply ground 5 in (r) signal input for low-side r-phase igbt 6 v fo fault output 7 c fod capacitor for fault output duration time selection 8 c sc capacitor (low-pass filter) for over current detection 9 r (th) ntc thermistor terminal 10 v (th) ntc thermistor terminal 11,12 n.c no connection 13~16 n igbt emitter 17~20 n r negative dc-link of rectifier 21,22 p positive rail of dc?link 23 n.c no connection 24 l reactor connection pin 25 p r positive dc?link of rectifier 26 r ac input for r-phase 27 s ac input for s-phase device marking device package reel size tape width quantity FPAB30BH60 FPAB30BH60 spm27-ia - - 10 csc cfod vfo in(s) com vcc out v th r th c sc c fod v fo in com vcc p s r n r ntc thermistor p r l n
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) absolute maximum ratings (t j = 25c, unless otherwise specified) converter part note 1. the maximum junction temperature rating of the power chips integrated within the spm ? is 150 c(@t c 100 c). however, to insure safe operation of the spm ? , the average junction temperature should be limited to t j(ave) 125 c (@t c 100 c) control part total system thermal resistance note : 2. for the measurement point of case temperature(t c ), please refer to fig. 2. item symbol condition rating unit supply voltage v i applied between r-s 264 v rms supply voltage (surge) v i(surge) applied between r-s 500 v output voltage v pn applied between p- n 450 v output voltage (surge) v pn(surge) applied between p- n 500 v collector-emitter voltage v ces 600 v input current (100% load) i i t c < 95c, v i =220v, v pn = 390v, v pwm =20khz 25 a input current (125% load) i i(125%) t c < 95c, v i =220v, v pn = 390v, v pwm =20khz, 1min non-repetitive 30 a collector dissipation p c t c = 25c per one igbt 169 w operating junction temperature t j (note 1) -20 ~ 150 c item symbol condition rating unit control supply voltage v cc applied between v cc - com 20 v input signal voltage v in applied between in - com -0.3~5.5 v fault output supply voltage v fo applied between v fo - com -0.3~v cc +0.3 v fault output current i fo sink current at v fo pin 5 ma current sensing input voltage v sc applied between c sc - com -0.3~v cc +0.3 v item symbol condition rating unit module case operation temperature t c -20 ~ 100 c storage temperature t stg -40 ~ 125 c isolation voltage v iso 60hz, sinusoidal, ac 1 minute, connection pins to dbc 2500 v rms item symbol condition min. typ. max. unit junction to case thermal resistance (referenced to pkg center) r (j-c)q igbt - - 0.74 c/w r (j-c)f frd - - 1.44 c/w r (j-c)r rectifier - - 2.07 c/w
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) electrical characteristics (t j = 25c, unless otherwise specified) converter part note 3. t on and t off include the propagation delay time of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see fig. 4 control part note 4. the fault-out pulse width t fod depends on the capacitance value of c fod according to the following approximate equation : c fod = 18.3 x 10 -6 x t fod [f] item symbol condition min. typ. max. unit igbt saturation voltage v ce(sat) v cc =15v, v in = 5v; i c =30a - 2.0 2.8 v frd forward voltage v ff i f = 30a - 1.8 2.5 v rectifier forward voltage v fr i f = 30a - 1.2 1.5 v peak surge current i fsm non-repetitive, 60hz single half-sine wave 200 - - a switching times t on v pn = 400v, v cc = 15v, i c =30a v in = 0v ? 5v, inductive load (note 3) - 650 - ns t c(on) - 400 - ns t off - 620 - ns t c(off) - 200 - ns t rr - 60 - ns i rr - 3.5 - a collector - emitter leakage current i ces v ce = v ces - - 250 a item symbol condition min. typ. max. unit quiescent v cc supply cur - rent i qccl v cc = 15v, in = 0v v cc - com - - 26 ma fault output voltage v foh v sc = 0v, v fo circuit: 4.7k to 5v pull-up 4.5 - - v v fol v sc = 1v, v fo circuit: 4.7k to 5v pull-up - - 0.8 v over current trip level v sc(ref) v cc = 15v 0.45 0.5 0.55 v supply circuit under- voltage protection uv ccd detection level 10.7 11.9 13.0 v uv ccr reset level 11.2 12.4 13.2 v fault-out pulse width t fod c fod = 33nf (note 4) 1.4 1.8 2.0 ms on threshold voltage v in(on) applied between in - com 3.0 - - v off threshold voltage v in(off) - - 0.8 v resistance of thermistor r th @ t c = 25c (note fig. 9) - 50 - k @ t c = 100c (note fig. 9) - 2.99 - k
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) electrical characteristics fig. 4. switching time definition mechanical characteristics and ratings fig. 5. flatness measurement position item condition limits units min. typ. max. mounting torque mounting screw: - m3 recommended 0.62n?m 0.51 0.62 0.72 n?m device flatness note fig. 5 0 - +120 m weight - 15.00 - g t on t c(on) t rr i rr 10% of i c 100% of i c 90% of i c 120% of i c 15% of v ce (a) turn-on t off t c(off) (b) turn-off i c v ce v ce i c v in v in 15% of v ce 10% of i c (+) (+) (+)
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) time charts of spms protective function p1 : normal operation - igbt on and conducting current p2 : under voltage detection p3 : igbt gate interrupt p4 : fault signal generation p5 : under voltage reset p6 : normal operation - igbt on and conducting current fig. 6. under-voltage protection p1 : normal operation - igbt on and conducting current p2 : over current detection p3 : igbt gate interrupt / fault signal generation p4 : igbt is slowly turned off p5 : igbt off signal p6 : igbt on signal - but igbt cannot be turned on during the fault output activation p7 : igbt off state p8 : fault output reset and normal operation start fig. 7. over current protection internal ig b t g ate-e m itter v oltage input signal output current fault output signal control supply voltage p1 p2 p3 p4 p6 p5 uv detect uv reset inte rn al ig b t gate-em itter voltage inp ut s ig nal o utp ut c u rre nt sensing voltage fault output signal p1 p2 p3 p4 p6 p5 p7 p8 o c r eference voltage (0.5v) rc filter delay oc detection
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) fig. 8. application example r-t graph 0 20 40 60 80 100 120 20 30 40 50 60 70 80 90 100 110 120 130 temperature [ c] resistance [k ] fig. 9. r-t curve of the built-in thermistor
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) detailed package outline drawings
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) detailed package outline drawings
?2007 fairchild semiconductor corporation FPAB30BH60 smart power module (spm ? ) detailed package outline drawings
?2007 fairchild semiconductor corporation rev. h1 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? gto? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only.

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